APTM100A23SCT datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  APTM100A23SCT
• Производитель
  Microsemi Corporation
• Описание
  Microsemi Corporation APTM100A23SCT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: UNSPECIFIED Terminal Position: UPPER Number of Terminals: 10 Package Body Material: UNSPECIFIED Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Case Connection: ISOLATED Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 36 A DS Breakdown Voltage-Min: 1000 V Avalanche Energy Rating (Eas): 2500 mJ Drain-source On Resistance-Max: 0.2300 ohm Pulsed Drain Current-Max (IDM): 144 A
• Количество страниц
  4 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  130,89 KB

APTM100A23SCT datasheet скачать

APTM100A23SCT datasheet